Product--BEIJING COMPOUND CRYSTAL TECHNOLOGY

CCT Indium Phosphide Wafer Specification

2-3英寸单δ掺杂PHEMT

Dopant	Diameter （mm）	Type	Concentration （cm-3）	Mobility (cm2/V.s)	Resistivity (W.cm)	EPD (cm-2)
Undoped	50	N	(0.8-2)´1016	(3.5- 4) ´103	0	<(5-6)´104
Sulphur	50	N	(0.8-3)´1018 (4-6)´1018	(2.0-2.4) ´103 (1.3-1.6) ´103	0	<5´104 5´103
Sulphur	76	N	(0.8-3)´1018 (4-6)´1018	(2.0-2.4) ´103 (1.3-1.6) ´103	0	<1´105 <5´104
Zinc	50	P	(0.6-2) ´1018 (3-6)´1018	70-90 50-70	0	<5´104 5´103
Fe	50	N	107-108	>2000	107-108	<5´104
Fe	76	N	107-108	>1000	107-108	<2´105
Poly-InP	50－70	N	(0.6-5)´1016	0	0	0
One side polished，orientation(100）,thickness:350µm (2 inch),625µm(3inch). Other special requirements can be satisfied.